| PART |
Description |
Maker |
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| MG15J6ES40 |
INSULATED GATE BIPOLAR TRANSISTOR
|
Toshiba Semiconductor
|
| MGP15N60U |
Insulated Gate Bipolar Transistor
|
MOTOROLA[Motorola, Inc]
|
| MGP21N60E |
Insulated Gate Bipolar Transistor
|
MOTOROLA[Motorola, Inc]
|
